Approaching the information theoretical bound of multi-level NAND flash memory storage efficiency

2009 IEEE International Memory Workshop, IMW '09

Volumn , Issue , 2009, Pages

  Li, Shu ^a   Zhang, Tong ^a  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

MULTI-LEVEL; NAND FLASH MEMORY; TEST VEHICLE; THEORETICAL BOUNDS;

INFORMATION THEORY; NAND CIRCUITS;

FLASH MEMORY;

EID: 70349993359     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IMW.2009.5090580     Document Type: Conference Paper

References (5)

1. T. M. Cover and J. A. Thomas, Element of Information Theory, John Wiley & Sons, 1991.
2. K. Kim, "Future memory technology: challenges and opportunities," in Proc. of International Symposium on VLSI Technology, Systems and Applications, April 2008, pp. 5-9.
3. J. Lee et al., "Effects of floating-gate interference on nand flash memory cell operation," IEEE Electron Device Letters, vol. 23, pp. 264-266, May 2002.
4. J. B. Anderson and A. Svensson, Coded Modulation Systems, Kluwer Academic / Plenum Publishers, 2003.
5. G. Ungerboeck, "Trellis-coded modulation with redundant signal sets Part I, II," IEEE Communications Magazine, vol. 25, pp. 5-21, Feb. 1987.