Effect of annealing conditions on the magnetism of Ni-doped La0.4Sr0.6TiO3-δ powders

Journal of Magnetism and Magnetic Materials

Volumn 322, Issue 1, 2010, Pages 73-78

  Liu, K L ^a,b   Yuan, S L ^a   Tian, Z M ^a   He, J H ^a   Li, P ^a   Yin, S Y ^a   Zheng, X F ^a   Wang, C H ^a   Duan, H N ^a   Huo, S X ^a  

^a HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

^b ZHOUKOU NORMAL UNIVERSITY   (China)

Author keywords

Bound magnetic polaron; Diluted magnetic semiconductor; Room temperature ferromagnetism

Indexed keywords

ANNEALING CONDITION; ANNEALING TEMPERATURES; BOUND MAGNETIC POLARON; DILUTED MAGNETIC SEMICONDUCTOR; HIGH TEMPERATURE; MAGNETIC PHASE; MAXIMUM VALUES; NI-DOPED; ROOM TEMPERATURE; ROOM TEMPERATURE FERROMAGNETISM; SINGLE PHASE; SOL-GEL METHODS; STRUCTURAL AND MAGNETIC PROPERTIES; STRUCTURAL DEFECT; TIO;

ANNEALING; MAGNETIC PROPERTIES; MAGNETIC SEMICONDUCTORS; METAL ANALYSIS; NICKEL; OXYGEN; OXYGEN VACANCIES; POLARONS; POWDERS; SOL-GEL PROCESS; TRANSMISSION ELECTRON MICROSCOPY;

FERROMAGNETISM;

EID: 70349966168     PISSN: 03048853     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jmmm.2009.08.031     Document Type: Article

References (30)

1. Dietl T., Ohno H., Matsukura F., Cibert J., and Ferrand D. Science 287 (2000) 1019
2. Tiwari A., Bhosle V.M., Ramachandran S., Sudhakar N., Narayan J., Budak S., and Gupta A. Appl. Phys. Lett. 88 (2006) 142511
3. Pearton S.J., Heo W.H., Ivill M., Norton D.P., and Steiner T. Semicond. Sci. Technol. 19 (2004) R59
4. Cong C.J., Hong J.H., Liu Q.Y., Liao L., and Zhang K.L. Solid State Commun. 138 (2006) 511
5. Ohno H. Science 281 (1998) 951
6. Martín-González M.S., Fernández J.F., Rubio-Marcos F., Lorite I., Costa-Krämer J.L., Quesada A., et al. J. Appl. Phys. 103 (2008) 083905
7. Matsumoto Y., Murakami M., Shono T., Hasegawa T., Fukumura T., Kawasaki M., et al. Science 291 (2001) 854
8. Coey J.M.D., Venkatesan M., and Fitzgerald C.B. Nat. Mater. 4 (2005) 173
9. Kittilstved K.R., Liu W.K., and Gamelin D.R. Nat. Mater. 5 (2006) 291
10. Hong N.H. J. Magn. Magn. Mater. 303 (2006) 338
11. Kundaliya D., Ogale S.B., Lofland S.E., Dhar S., Metting C.J., Shinde S.R., et al. Nat. Mater. 3 (2004) 709
12. García M.A., Ruiz-González M.L., Quesada A., Costa-Krämer J.L., Fernández J.F., Khatib S.J., et al. Phys. Rev. Lett. 94 (2005) 217206
13. Wongsaprom K., Swatsitang E., Maensiri S., Srijaranai S., and Seraphin S. Appl. Phys. Lett. 90 (2007) 162506
14. Maensiri S., Wongsaprom K., Swatsitang E., and Seraphin S. J. Appl. Phys. 102 (2007) 076110
15. Qiao P.T., Zhao Z.H., Zhao Y.G., Zhang X.P., Zhang W.Y., Ogale S.B., et al. Thin Solid Films 468 (2004) 8
16. Ranchal R., Bibes M., Barthelemy A., Bouzehouane K., Guyard S., Jacquet E., et al. J. Appl. Phys. 98 (2005) 13514
17. Kulkarni V.N., Shinde S.R., Zhao Y.G., Choudhary R.J., Ogale S.B., Greene R.L., and Venkatesan T. Nucl. Instrum. Methods Phys. Res. B 219 (2004) 902
18. Herranz G., Ranchal R., Bibes M., Jaffres H., Jacquet E., Maurice J.L., Bouzehouane K., et al. Phys. Rev. Lett. 96 (2006) 27207
19. Fukumura T., Jin Z.W., Ohtomo A., Koinuma H., and Kawasaki M. Appl. Phys. Lett. 75 (1999) 3366
20. Hong N.H., Sakai J., Poirot N., and Brize V. Phys. Rev. B 73 (2006) 132404
21. Georgea M., Mary John A., Naira S.S., Joy P.A., and Anantharaman M.R. J. Magn. Magn. Mater. 302 (2006) 190
22. Yang X.L., Chen Z.T., Wang C.D., Zhang Y., Pei X.D., Yang Z.J., et al. J. Appl. Phys. 105 (2009) 053910
23. Zhou S.Q., Potzger K., Talut G., Reuther H., von Borany J., Grötzschel R., et al. J. Appl. Phys. 103 (2008) 023902
24. Spalet J., Lewichki A., Tarnawski Z., Furdyna J.K., Galazka R., and Obuszko Z. Phys. Rev. B 29 (1984) 5634
25. Bryan J.D., Santangelo S.A., Keveren S.C., and Gamelin D.R. J. Am. Chem. Soc. 127 (2005) 15568
26. Luo L.B., Zhao Y.G., Tian H.F., Yang J.J., Zhang H.Y., Li J.Q., et al. Appl. Phys. Lett. 92 (2008) 232507
27. Sharma P., Gupta A., Rao K.V., Owens F.J., Ahuja R., Guillen J.M., Johansson B., and Gehring G.A. Nat. Mater. 2 (2003) 673
28. Rao C.N.R., and Deepak F.L. J. Mater. Chem. 15 (2005) 573
29. Wang H., Chen Y., Wang H.B., Zhang C., Yang F.J., Duan J.X., et al. Appl. Phys. Lett. 90 (2007) 052505
30. Hou D.L., Meng H.J., Jia L.Y., Ye X.J., Zhou H.J., and Li X.L. Phys .Lett. A 364 (2007) 318