One order of magnitude enhancement of electron mobility by rapid cooling the melt of an n-type organic semiconductor

Journal of Physical Chemistry C

Volumn 113, Issue 37, 2009, Pages 16549-16552

  Chen, Liang ^a   Dong, Guifang ^a   Duan, Lian ^a   Wang, Liduo ^a   Qiao, Juan ^a   Zhang, Deqiang ^a   Qiu, Yong ^a  

^a Tsinghua University   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON TRANSPORT; FIELD DEPENDENCE; GAUSSIAN DISORDER MODELS; HIGH CARRIER MOBILITY; HIGH DENSITY; INTERMOLECULAR DISTANCE; LOW CRYSTALLINITY; N-TYPE ORGANIC SEMICONDUCTOR; ORDER OF MAGNITUDE; POSITIONAL DISORDER; RAPID COOLING; TIME-OF-FLIGHT TECHNIQUES;

COOLING; ELECTRIC FIELDS; ELECTRON MOBILITY; SEMICONDUCTING ORGANIC COMPOUNDS;

ELECTRONS;

EID: 70349773372     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp904408m     Document Type: Article

References (24)

1. Coropceanu, V.; Cornil, J.; da Silva, D. A.; Olivier, Y.; Silbey, R.; Bredas, J. L. Chem. Rev. 2007, 107, 926.
2. Allard, S.; Forster, M.; Souharce, B.; Thiem, H.; Scherf, U. Angew. Chem., Int. Ed. 2008, 47, 4070.
3. Mas-Torrent, M.; Rovira, C. Chem. Soc. Rev. 2008, 37, 827.
4. Shirota, Y.; Kageyama, H. Chem. Rev. 2007, 107, 953.
5. Jones, B. A.; Facchetti, A.; Wasielewski, M. R.; Marks, T. J. J. Am. Chem. Soc. 2007, 129, 15259.
6. Ioannidis, A.; Dodelet, J. P. J. Phys. Chem. B 1997, 101, 891.
7. Chen, L.; Dong, G. F.; Duan, L.; Wang, L. D.; Qiao, J.; Zhang, D. Q.; Qui, Y. J. Phys. Chem. C 2007, 111, 18376.
8. Kaafarani, B. R.; Kondo, T.; Yu, J. S.; Zhang, Q.; Dattilo, D.; Risko, C.; Jones, S. C.; Barlow, S.; Domercq, B.; Amy, F.; Kahn, A.; Bredas, J. L.; Kippelen, B.; Marder, S. R. J. Am. Chem. Soc. 2005, 127, 16358.
9. Borsenberger, P. M.; Pautmeier, L.; Bässler, H. J. Chem. Phys. 1991, 94, 5447.
10. Bässler, H. Phys. Status Solidi B 1993, 175, 15.
11. Swallen, S. F.; Kearns, K. L.; Mapes, M. K.; Kim, Y. S.; McMahon, R. J.; Ediger, M. D.; Wu, T.; Yu, L.; Satija, S. Science 2007, 315, 353.
12. Naito, K.; Miura, A. J. Phys. Chem. 1993, 97, 6240.
13. Peumans, P.; Bulovic, V.; Forrest, S. R. Appl. Phys. Lett. 2000, 76, 2650.
14. D'Andrade, B. W.; Forrest, S. R.; Chwang, A. B. Appl. Phys. Lett. 2003, 83, 3858.
15. Han, S. L.; Wang, L. D.; Lei, G. T.; Qiu, Y. Jpn. J. Appl. Phys. Part 2 2005, 44, L182.
16. Shirota, Y. J. Mater. Chem. 2000, 10, 1.
17. Debenedetti, P. G.; Stillinger, F. H. Nature 2001, 410, 259.
18. Casalini, R.; Capaccioli, S.; Roland, C. M. J. Phys. Chem. B 2006, 110, 11491.
19. Pai, D. M. J. Chem. Phys. 1970, 52, 2285.
20. Borsenberger, P. M.; Fitzgerald, J. J. J. Phys. Chem. 1993, 97, 4815.
21. Shi, Q. M.; Hou, Y. B.; Jin, H.; Li, Y. B. J. Appl. Phys. 2007, 102, 073108.
22. Xiang, H. F.; Xu, Z. X.; Roy, V. A. L.; Che, C. M.; Lai, P. T. Rev. Sci. Instrum. 2007, 78, 034104.
23. Kennedy, A. R.; Smith, W. E.; Tackley, D. R.; David, W. I. F.; Shankland, K.; Brown, B.; Teat, S. J. J. Mater. Chem. 2002, 12, 168.
24. Ceolin, P. R.; Levillain, M. M. P. Acta Crystallogr. 1979, B35, 1630.