Solidification temperature of silicon surface layer melted by pulsed laser irradiation

Applied Surface Science

Volumn 143, Issue 1, 1999, Pages 265-271

  Ivlev, G D ^a   Gatskevich, E I ^a  

^a B I STEPANOV INSTITUTE OF PHYSICS   (Belarus)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHIZATION; CRYSTAL ORIENTATION; EPITAXIAL GROWTH; INTERFACES (MATERIALS); LASER BEAM EFFECTS; MELTING; MORPHOLOGY; PHASE TRANSITIONS; REACTION KINETICS; SURFACES; TEMPERATURE;

PULSED LASER IRRADIATION; UNDERCOOLING;

SILICON;

EID: 0032657207     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(98)00906-4     Document Type: Article

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