Influence of Li content on electrical properties of highly piezoelectric (Li,K,Na) NbO3 thin films prepared by sol-gel processing

Journal of Applied Physics

Volumn 106, Issue 6, 2009, Pages

  Lai, Fengping ^a   Li, Jing Feng ^a   Zhu, Zhi Xiang ^a   Xu, Ying ^a  

^a TSINGHUA UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

COERCIVE FIELD; ELECTRICAL PROPERTY; IN-DEPTH ANALYSIS; LEAD-FREE PIEZOELECTRICS; LI CONTENT; LI SUBSTITUTION; PB(ZR ,TI)O; PIEZOELECTRIC COEFFICIENT; PIEZOELECTRIC PROPERTY; REMNANT POLARIZATIONS; SI (100) SUBSTRATE; SOL-GEL METHODS; SOL-GEL PROCESSING;

CRYSTAL MICROSTRUCTURE; ELECTRIC PROPERTIES; GELATION; GELS; LEAD; PIEZOELECTRIC TRANSDUCERS; PIEZOELECTRICITY; SEMICONDUCTING SILICON COMPOUNDS; SODIUM; SOL-GEL PROCESS; SOL-GELS; SOLS; THIN FILMS; ZIRCONIUM;

FILM PREPARATION;

EID: 70349642103     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3223320     Document Type: Article

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