CuPt ordering in high bandgap Gax In1-x P alloys on relaxed GaAsP step grades

Journal of Applied Physics

Volumn 106, Issue 6, 2009, Pages

  Steiner, M A ^a   Bhusal, L ^a   Geisz, J F ^a   Norman, A G ^a   Romero, M J ^a   Olavarria, W J ^a   Zhang, Y ^b   Mascarenhas, A ^a  

^a NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

^b University of North Carolina at Charlotte   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAPS; COMPOSITIONAL RANGE; GAAS SUBSTRATES; GRADED LAYERS; HIGH BANDGAP; LATTICE MISFITS; ORDER PARAMETER; P-LAYER;

ANTIMONY; ENERGY GAP; SEMICONDUCTING GALLIUM; SUBSTRATES; SURFACE ACTIVE AGENTS;

GALLIUM ALLOYS;

EID: 70349640171     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3213376     Document Type: Article

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