SCOPUS 정보 검색 플랫폼

Volumn 47, Issue 4 PART 1, 2008, Pages 2024-2027

Carbon nanotube vias fabricated by remote plasma-enhanced chemical vapor deposition

(8) Katagiri, Masayuki a Sakuma, Naoshi a Suzuki, Mariko a Sakai, Tadashi a Sato, Shintaro b Hyakushima, Takashi b Nihei, Mizuhisa b Awano, Yuji b

a TOSHIBA CORPORATION (Japan)

b SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC (Japan)

Author keywords

Carbon nanotube; Interconnect; Low temperature growth; Plasma enhanced chemical vapor deposition; Resistance; Via

Indexed keywords

CARBON; CARBON NANOTUBES; CHEMICAL MECHANICAL POLISHING; CHEMICAL POLISHING; CHEMICAL RESISTANCE; DEPOSITION; MULTIWALLED CARBON NANOTUBES (MWCN); NANOCOMPOSITES; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; NANOTUBES; PLASMA DEPOSITION; PLASMAS; VAPOR DEPOSITION; VAPORS;

CARBON NANOTUBE VIAS; CNT BUNDLES; CONTACT FORMATIONS; ELECTRICAL EVALUATIONS; INTERCONNECT; LOW-TEMPERATURE GROWTH; PLANARIZATION; REMOTE PLASMAS; RESISTANCE; SELECTIVE GROWTHS; VIA; VIA CHAINS; VIA HOLES; VIA RESISTANCES;

PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;

EID: 54249088937 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.47.2024 Document Type: Article

Times cited : (23)

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