Growth of 3C-SiC nanowires on nickel coated Si(100) substrate using dichloromethylvinylsilane and diethylmethylsilane by MOCVD method

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 6, Issue 4, 2009, Pages 810-812

  Hyun, J S ^a   Nam, S H ^a   Kang, B C ^a   Boo, J H ^a  

^a Sungkyunkwan University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS CARBON LAYER; CRYSTALLIZED STRUCTURE; CUBIC SILICON CARBIDE; DIETHYLMETHYLSILANE; EDX ANALYSIS; ELECTRONIC DEVICE; FIELD EMITTER; GROWTH DIRECTIONS; METALORGANIC CHEMICAL VAPOR DEPOSITION; MOCVD METHODS; NICKEL COATED; SI (100) SUBSTRATE; SIC NANOWIRE; SINGLE PRECURSORS; SINGLE-SOURCE PRECURSOR; TEM ANALYSIS; XPS; XRD PATTERNS;

AMORPHOUS CARBON; ELECTRIC WIRE; EPITAXIAL GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NANOWIRES; NICKEL ALLOYS; ORGANIC CHEMICALS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM DOTS; SILICON; SILICON CARBIDE;

SUBSTRATES;

EID: 70349434010     PISSN: 18626351     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssc.200880621     Document Type: Conference Paper

References (9)

1. K. C. Kim, C. I. Park, J. I. Roh, K. S. Nahm, Y. B. Hahm, Y.-S. Lee, and K. Y. Lim, J. Electrochem. Soc. 148, C383 (2001).
2. S. Madapura, A. J. Steckl, and M. Lobada, J. Electrochem. Soc. 146, 1197 (1999).
3. Y. Narita, T. Inubushi, M. Harashima, K. Yasui, and T. Akahane, Appl. Surf. Sci. 216, 575 (2003).
4. Th. Kunstmann and S. Veprek, Appl. Phys. Lett. 67, 3126 (1995).
5. J.-H. Boo, S.-B. Lee, K.-S. Yu, M. M. Sung, and Y. Kim, Surf. Coat. Tech. 131, 147 (2000).
6. B.-C. Kang, S.-B. Lee, and J.-H. Boo, Thin Solid Films 464/465, 215 (2004).
7. H. J. Li, Z. J. Li, A. L. Meng, K, Z. Li, X. N. Zhang, and Y. P. Xu, J. Alloys Compd. 352, 279 (2003).
8. B.-C. Kang, S.-B. Lee, and J.-H. Boo, J. Vac. Sci. Technol. B 23, 1722 (2005).
9. H. Kohno and H. Yoshida, Solid State Commun. 132, 59 (2004).