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Volumn 6, Issue 6, 2009, Pages 1468-1471
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A study of the grain size and electric properties of Mn-doped ZnO thin films grown by plasma-assisted molecular beam epitaxy
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Author keywords
[No Author keywords available]
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Indexed keywords
C-SAPPHIRE;
ELECTRICAL PROPERTY;
GRAIN INTERIORS;
GRAIN SIZE;
HALL MEASUREMENTS;
IMPEDANCE SPECTROSCOPY;
IMPURITY SCATTERING;
MN-DOPED ZNO;
MN-DOPING;
PLASMA-ASSISTED MOLECULAR BEAM EPITAXY;
RAMAN SPECTRA;
ZNO FILMS;
ACTIVATION ENERGY;
ATOMIC FORCE MICROSCOPY;
CARRIER CONCENTRATION;
CORUNDUM;
CRYSTAL GROWTH;
GALVANOMAGNETIC EFFECTS;
GRAIN BOUNDARIES;
GRAIN SIZE AND SHAPE;
HALL MOBILITY;
MANGANESE;
MANGANESE COMPOUNDS;
METALLIC FILMS;
MOLECULAR BEAM EPITAXY;
MOLECULAR BEAMS;
PLASMAS;
RAMAN SPECTROSCOPY;
SEMICONDUCTING ZINC COMPOUNDS;
SEMICONDUCTOR DOPING;
SEMICONDUCTOR QUANTUM WIRES;
ZINC;
ZINC OXIDE;
ELECTRIC PROPERTIES;
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EID: 70349431438
PISSN: 18626351
EISSN: None
Source Type: Journal
DOI: 10.1002/pssc.200881514 Document Type: Conference Paper |
Times cited : (12)
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References (16)
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