Temperature dependence of excitonic emission in CuInSe2

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 6, Issue 5, 2009, Pages 1082-1085

  Yakushev, M V ^a   Martin, R W ^a   Mudryi, A V ^b  

^a UNIVERSITY OF STRATHCLYDE   (United Kingdom)

^b INSTITUTE OF SOLID STATE AND SEMICONDUCTOR PHYSICS   (Belarus)

Author keywords

[No Author keywords available]

Indexed keywords

DISSOCIATION ENERGIES; EXCITATION INTENSITY; EXCITONIC EMISSION; FREE EXCITONS; HIGH QUALITY; QUENCHING PARAMETERS; RADIATIVE RECOMBINATION PROCESS; TEMPERATURE DEPENDENCE; VERTICAL BRIDGMAN TECHNIQUE;

BINDING ENERGY; COPPER COMPOUNDS; EXCITONS; QUENCHING; SEMICONDUCTOR QUANTUM WELLS;

SINGLE CRYSTALS;

EID: 70349419986     PISSN: 18626351     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssc.200881155     Document Type: Conference Paper

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