Using reflectance anisotropy spectroscopy to characterize capped silver nanostructures grown on silicon

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 5, Issue 8, 2008, Pages 2556-2560

  Fleischer, K ^a   Jacob, J ^a   Chandola, S ^a,b   Esser, N ^b   McGilp, J F ^a  

^a TRINITY COLLEGE DUBLIN   (Ireland)

^b ISAS INSTITUTE FOR ANALYTICAL SCIENCES   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AMBIENT CONDITIONS; ANISOTROPIC CONDUCTIVITY; CAPPING PROCESS; METALLIC NANOSTRUCTURE; MODEL CALCULATIONS; NEAR-IR; OFF-CUT ANGLES; PROTECTING LAYER; RAS SPECTRA; REFLECTANCE ANISOTROPY SPECTROSCOPY; ROOM TEMPERATURE DEPOSITION; SI (1 1 1); SILVER NANOSTRUCTURES; SINGLE DOMAINS; SPECTRAL REGION;

ANISOTROPY; INFRARED SPECTROSCOPY; MONOLAYERS; NANOSTRUCTURES; REFLECTION; SOIL CONSERVATION;

SILVER;

EID: 70349315064     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200779101     Document Type: Conference Paper

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