Investigation of amorphous InGaZnO based TFT interface properties with synchrotron radiation analysis

Materials Research Society Symposium Proceedings

Volumn 1108, Issue , 2009, Pages 121-126

  Joo, Minho ^a   Choi, Jongkwon ^a   Noh, Seokhwan ^a   Park, Kyuho ^a   Ihm, Kyuwook ^b   Kim, Kijeong ^b   Kang, Taihee ^b  

^a LG Electronics Inc   (South Korea)

^b POSTECH   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE CHANNEL LAYERS; DEVICE DEGRADATION; GATE DIELECTRIC LAYERS; INDIUM GALLIUM ZINC OXIDES; INTERFACE PROPERTY; MOLECULAR STATE; NEAR EDGE X-RAY ABSORPTION FINE STRUCTURES; PHYSICAL DAMAGES; SPUTTERING PROCESS;

ELECTROMAGNETIC WAVES; GATE DIELECTRICS; GATES (TRANSISTOR); PHOTODEGRADATION; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR SWITCHES; SYNCHROTRONS; ZINC; ZINC OXIDE;

SYNCHROTRON RADIATION;

EID: 70349298467     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)

1. K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, and H. Hosono, Nature (Lodon) 432, 488 (2004).
2. H. Yabuta, M. Sano, K. Abe, T. Aiba, T. Den, H. Kumomi, K. Nomura, T. Kamiya, and H. Hosono, Appl. Phy. Left. 89, 112123 (2006).
3. K. Nomura, H. Ohta, K. Eda, T. Kamiya, M. Hirano, and H. Hosono, Science 300, 1269 (2003).
4. R. L. Hoffman, B. J. Norris, and J. F. Wager, Appl. Phys. Left. 82, 733 (2003).
5. Y. Chung, J. C. Lee, and H. J. Shin, Appl. Phy. Lett. 86, 022901 (2005).
6. G. C. King, F. H. Read, and M. Tronc, Chem. Phys. Left. 52, 50(1997).
7. C. T. Chen, Y. Ma, and F. Sette, Phys. Rev. A 40, 6737 (1989).
8. Z. Y. Wu, S. Gota, F. Jollet, M. Pollak, M. Goutier-Soyerand C. R. Natoli, Phys. Rev. B 55, 2570 (1997).
9. F. M. F. De Groot, M. Grioni, J. C. Fuggle, J. Ghijsen, and G. A. Sawatzky, Phys. Rev. B 40, 5715 (1989).