In-situ and ex-situ ZnO nanorod growth on ZnO homo-buffer layers

Journal of Crystal Growth

Volumn 311, Issue 20, 2009, Pages 4491-4494

  Kwak, C H ^a   Kim, B H ^b   Park, S H ^c   Seo, S Y ^a   Park, C I ^b   Kim, S H ^a   Han, S W ^d  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

^b Chonbuk National University   (South Korea)

^c Research Institute of Industrial Science and Technology (RIST)   (South Korea)

^d Institute of Science Education   (South Korea)

Author keywords

A1. Buffer layer; A1. Structure; A1. ZnO; A3. Film; A3. MOCVD; B1. Nanorod

Indexed keywords

A1. BUFFER LAYER; A1. STRUCTURE; A1. ZNO; A3. FILM; A3. MOCVD; B1. NANOROD;

BUFFER LAYERS; CRYSTAL STRUCTURE; ELECTRON EMISSION; EPITAXIAL LAYERS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NANORODS; OPTICAL WAVEGUIDES; ORGANIC CHEMICALS; TRANSMISSION ELECTRON MICROSCOPY; ZINC OXIDE; ZINC SULFIDE;

SEMICONDUCTING ZINC COMPOUNDS;

EID: 70349240821     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2009.08.010     Document Type: Article

References (21)

1. Duan X., Hunag Y., Cui Y., Wang J., and Lieber C.M. Nature (London) 409 (2001) 66
2. Wang X., Song J., Liu J., Lin Z., and Wang Z.L. Science 316 (2007) 102
3. Huang M.H., Mao S., Feick H., Yang H., Wu Y., Kind H., Weber E., Russo R., and Yang P. Science 292 (2001) 1897
4. Park W.I., Kim D.H., Jung S.-W., and Yi G.C. Appl. Phys. Lett. 80 (2002) 4232
5. Park S.-H., Seo S.-Y., Kwak C.-H., Kim S.-H., and Han S.-W. J. Crystal Growth 303 (2007) 580
6. Makino T., Tamura K., Chia C.H., Segawa Y., Kawasaki M., Ohtomo A., and Koinuma H. J. Appl. Phys. 92 (2002) 7157
7. Choi J.H., Tabata H., and Kawai T. J. Crystal Growth 226 (2002) 493
8. Vayssieres L. Adv. Mater. 15 (2003) 464
9. Tang X., Ma Z.Q., Zhao W.G., and Wang D.M. Proc. SPIE 6984 (2008) 698421
10. Wu J.-J., Chang R.-C., and Lin C.-C. J. Electrochem. Soc. 155 (2008) D771
11. Park W.I., and Yi G.-C. Adv. Mater. 16 (2004) 87
12. Park S.H., Kim S.-H., and Han S.-W. Nanotechnology 18 (2007) 055608
13. Park S.-H., Seo S.-Y., Kim S.-H., and Han S.-W. Appl. Phys. Lett. 88 (2006) 251903
14. Park S.-H., and Han S.-W. J. Nanosci. Nanotechnol. 7 (2007) 2526
15. Park S.-H., Han S.-W., and Korean J. Phys. Soc. 50 (2007) 1538
16. Seo S.-Y., Kwak C.-H., Lee Y.-B., Kim S.-H., Park S.-H., Han S.-W., and Korean J. Phys. Soc. 53 (2008) 249
17. Jie J., Wang G., Chen Y., Han X., Wang Q., Xu B., and Hou J.G. Appl. Phys. Lett. 86 (2005) 31909
18. Cong G.W., Wei H.Y., Zhang P.F., Peng W.Q., Wu J.J., Liu X.L., Jiao C.M., Hu W.G., Zhu Q.S., and Wang Z.G. Appl. Phys. Lett. 87 (2005) 231903
19. Wang L., Zhang X., Zhao S., Zhou G., Zhou Y., and Qi J. Appl. Phys. Lett. 86 (2005) 24108
20. Yu H.-J., Jeong E.-S., Park S.-H., Seo S.-Y., Kim S.-H., and Han S.-W. AIP Conf. Proc. 879 (2007) 1865
21. Park D.J., Kim D.C., Lee J.Y., and Cho H.K. Nanotechnology 17 (2006) 5238