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Physica Status Solidi (A) Applications and Materials Science

Volumn 206, Issue 9, 2009, Pages 2202-2205

Electrical and optical properties of Li xNi 1-xO/In: Mg xZn 1-xO heteroepitaxial junction grown on TiN buffered Si

(3) Wong, H F a Wong, K H a Lau, C H a

a HONG KONG POLYTECHNIC UNIVERSITY (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRICAL AND OPTICAL PROPERTIES; HETEROEPITAXIAL; HETEROEPITAXIAL RELATIONSHIPS; HETEROSTRUCTURES; LI-DOPED NIO; P-N JUNCTION; P-TYPE; RECTIFICATION RATIO; ROOM TEMPERATURE; SI (100) SUBSTRATE; SOLAR-BLIND; SPECTRAL RESPONSE; TURN ON VOLTAGE; UV DETECTOR; UV REGION;

DEPOSITION; ELECTRIC PROPERTIES; ELECTRIC RECTIFIERS; HETEROJUNCTIONS; OPTICAL PROPERTIES; PULSED LASER DEPOSITION; SEMICONDUCTING SILICON COMPOUNDS; SILICON; TITANIUM COMPOUNDS; TITANIUM NITRIDE; ZINC;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 70349150939 PISSN: 18626300 EISSN: 18626319 Source Type: Journal
DOI: 10.1002/pssa.200881786 Document Type: Article

Times cited : (8)

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