The role of interface thermal boundary resistance in the overall thermal conductivity of Si-Ge multilayered structures

Nanotechnology

Volumn 20, Issue 36, 2009, Pages

  Samvedi, Vikas ^a   Tomar, Vikas ^a  

^a Purdue University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANALYTICAL EXPRESSIONS; ENGINEERED MATERIALS; HEAT TRANSFER RESISTANCE; LAYERED STRUCTURES; MONOLAYER THICKNESS; MULTI-LAYERED STRUCTURE; NANO SCALE; NONEQUILIBRIUM MOLECULAR DYNAMICS; THERMAL BOUNDARY RESISTANCE; THERMAL PROPERTIES;

BREEDER REACTORS; GERMANIUM; HEAT RESISTANCE; MOLECULAR DYNAMICS; MONOLAYERS; NANOSTRUCTURED MATERIALS; OPTOELECTRONIC DEVICES; SILICON ALLOYS; THERMOANALYSIS; THERMOELECTRICITY;

THERMAL CONDUCTIVITY;

GERMANIUM; NANOMATERIAL; SILICON;

ARTICLE; CHEMICAL STRUCTURE; HEAT TOLERANCE; HEAT TRANSFER; MOLECULAR DYNAMICS; NANOANALYSIS; PRIORITY JOURNAL; THERMAL CONDUCTIVITY;

EID: 70349094540     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/20/36/365701     Document Type: Article

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