Microwave operation of sub-Micrometer gate surface channel MESFETs in polycrystalline diamond

Microwave and Optical Technology Letters

Volumn 51, Issue 11, 2009, Pages 2786-2788

  Calvani, P ^a   Corsaro, A ^a   Sinisi, F ^a   Rossi, M C ^a   Conte, G ^a   Giovine, E ^b   Ciccognani, W ^c   Limiti, E ^c  

^a ROMA TRE UNIVERSITY   (Italy)

^b IFN CNR   (Italy)

^c UNIVERSITY OF ROME TOR VERGATA   (Italy)

Author keywords

DC and RF performance; Device technology; Electrical characteristics; Semiconductor devices; Wide band semiconductors

Indexed keywords

ACTIVE REGIONS; DC AND RF PERFORMANCE; DEVICE TECHNOLOGY; DRAIN-SOURCE CURRENTS; ELECTRICAL CHARACTERISTICS; GATE LENGTH; LARGE-GRAIN; MAXIMUM OSCILLATION FREQUENCY; MESFETS; METAL SEMICONDUCTORS; MICROELECTRONIC TECHNOLOGIES; MICROWAVE OPERATIONS; POLYCRYSTALLINE DIAMONDS; SUBMICROMETERS; SUBMICRON GATE; SURFACE CHANNEL; WIDE BAND SEMICONDUCTORS;

DRAIN CURRENT; HIGH ELECTRON MOBILITY TRANSISTORS; HYDROGEN; MESFET DEVICES; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR SWITCHES;

FIELD EFFECT TRANSISTORS;

EID: 70349084499     PISSN: 08952477     EISSN: None     Source Type: Journal    
DOI: 10.1002/mop.24738     Document Type: Article

References (4)

1. H. Taniuchi, H. Umezawa, T. Arima, M. Tachiki, and H. Kawarada, High frequency performance of diamond field effect transistor, IEEE Electron Device Lett 22 (2001) 390.
2. M. Kasu, K. Ueda, H. Ye, Y. Yamauchi, S. Sasaki, and T. Makimoto, High RF output power for H-terminated diamond FETs, Diam Relat Mater 15 (2006) 783.
3. H. Ye, M. Kasu, K. Ueda, H. ye, Y. Yamauchi, N. Maeda, S. Sasaki, and T. Makimoto, Temperature dependent DC and RF performance of diamond based MESFET, Diam Relat Mater 15 (2006) 783.
4. V. G. Ralchenko, A. A. Smolin, V. I. Konov, K. F. Sergeichev, I. A. Sychov, I. I. Vlasov, V. V. Migulin, S. V. Voronina, and A. V. Khomich, Diam Relat Mater 6 (1997) 417.