Temperature dependent DC and RF performance of diamond MESFET

Diamond and Related Materials

Volumn 15, Issue 4-8, 2006, Pages 787-791

  Ye, H ^a   Kasu, M ^a   Ueda, K ^a   Yamauchi, Y ^a   Maeda, N ^b   Sasaki, S ^a   Makimoto, T ^a  

^a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

^b NTT CORPORATION   (Japan)

Author keywords

Diamond; MESFET; RF; Temperature

Indexed keywords

CAPACITANCE; FIELD EFFECT TRANSISTORS; SURFACES; THERMAL EFFECTS; THRESHOLD VOLTAGE;

CURRENT GAIN; DIAMOND SURFACE BENDS; GATE-SOURCE CAPACITANCE; TRANSMISSION-LINE-METHOD MEASUREMENTS;

DIAMONDS;

EID: 33745281736     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.diamond.2006.01.002     Document Type: Article

References (11)

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