Gate Tunable Infrared Phonon Anomalies in Bilayer Graphene

Physical Review Letters

Volumn 103, Issue 11, 2009, Pages

  Kuzmenko, A B ^a   Benfatto, L ^b,c,d   Cappelluti, E ^c,d   Crassee, I ^a   Van Der Marel, D ^a   Blake, P ^e   Novoselov, K S ^e   Geim, A K ^e  

^a UNIVERSITY OF GENEVA   (Switzerland)

^b MUSEO STORICO DELLA FISICA E CENTRO STUDI E RICERCHE ENRICO FERMI   (Italy)

^c INFM   (Italy)

^d UNIVERSITÀ DI ROMA LA SAPIENZA   (Italy)

^e UNIVERSITY OF MANCHESTER   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ANTI-SYMMETRIC; BI-LAYER; DOPED FULLERENE; ELECTRON BANDS; ELECTRONIC TRANSITION; GATE VOLTAGES; GRAPHENES; IN-PLANE; INFRARED INTENSITY; ORGANIC CHAINS; PHONON MODE; PHONON PEAKS;

DOPING (ADDITIVES); EUROPIUM; FULLERENES; GRAPHITE;

PHONONS;

EID: 70249106700     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.103.116804     Document Type: Article

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