Influence of dc bias on the dielectric relaxation in Fe-substituted CaCu3Ti4O12 ceramics: Grain boundary and surface effects

Journal of Physics D: Applied Physics

Volumn 42, Issue 17, 2009, Pages

  Mu, Chunhong ^a   Zhang, Huaiwu ^a   He, Ying ^a   Shen, Jian ^b   Liu, Peng ^c  

^a UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA   (China)

^b UNIVERSITY OF DELAWARE   (United States)

^c SHAANXI NORMAL UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ALL-CERAMIC; AVERAGE GRAIN SIZE; CUBIC PEROVSKITE; DC BIAS; DC BIAS VOLTAGE; DIELECTRIC CONSTANTS; FE DOPING; FREQUENCY RANGES; INTERFACIAL POLARIZATION; INTERNAL BARRIERS; LOW FREQUENCY; ROOM TEMPERATURE; SECONDARY PHASE; SOLID STATE REACTION METHOD; SPECTRA MEASUREMENTS; SURFACE CHARACTERISTICS; SURFACE EFFECT; SURFACE LAYERS;

BIAS VOLTAGE; CERAMIC CAPACITORS; CERAMIC MATERIALS; DIELECTRIC PROPERTIES; DIELECTRIC RELAXATION; GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; OXIDE MINERALS; PEROVSKITE; POLARIZATION; SURFACE TREATMENT;

SURFACE RELAXATION;

EID: 70149112072     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/42/17/175410     Document Type: Article

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