Dielectric relaxation and giant dielectric constant of Nb-doped CaCu 3Ti 4O 12 ceramics under dc bias voltage

Physica Status Solidi (A) Applications and Materials Science

Volumn 206, Issue 3, 2009, Pages 562-566

  Liu, Peng ^a   He, Ying ^b   Zhou, Jian Ping ^a,c   Mu, Chun Hong ^b   Zhang, Huai Wu ^b  

^a SHAANXI NORMAL UNIVERSITY   (China)

^b UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA   (China)

^c INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BODY-CENTERED-CUBIC; DC-BIAS VOLTAGES; DEBYE-TYPE RELAXATIONS; DIELECTRIC CONSTANTS; ELECTRIC MODULUS; GIANT DIELECTRIC CONSTANTS; GRAIN SIZES; HIGH FREQUENCIES; LOW FREQUENCIES; METAL OXIDE SEMICONDUCTORS; NB DOPING; SOLID-STATE REACTION METHODS; SURFACE LAYERS;

BIAS VOLTAGE; CERAMIC CAPACITORS; CHARGE COUPLED DEVICES; DIELECTRIC WAVEGUIDES; DOPING (ADDITIVES); GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; METALLIC COMPOUNDS; MOS DEVICES; NIOBIUM; PERMITTIVITY;

METAL OXIDE CERAMICS;

EID: 63049086308     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200824277     Document Type: Article

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