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Volumn 42, Issue 18, 2009, Pages

Laser induced changes on a-Ga50Se50 thin films

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION COEFFICIENTS; AS-DEPOSITED THIN FILMS; DIELECTRIC CONSTANTS; EXPOSURE TIME; EXTINCTION COEFFICIENTS; GLASS SUBSTRATES; HETEROPOLAR BONDS; HIGH ENERGY PHOTONS; HOMOPOLAR BONDS; LASER INDUCED; LASER IRRADIATIONS; LASER LIGHTS; MICROSCOPIC MODELS; OPTICAL ABSORPTION; OPTICAL ABSORPTION EDGE; OPTICAL GAP; OPTICAL PARAMETER; PHOTON ENERGY; THERMAL EVAPORATION TECHNIQUE; TRANSITION MODEL;

EID: 70149090561     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/42/18/185404     Document Type: Article
Times cited : (36)

References (49)
  • 19
    • 0021627010 scopus 로고
    • Optical Effects in Amorphous Semiconductors ed P C Taylor S G Bishop) (New York: AIP)
    • Abkowitz M, Foley G M T, Markovics J M and Pulumbo A C 1984 AIP Conf. Proc. 120 117-24 Optical Effects in Amorphous Semiconductors ed P C Taylor S G Bishop) (New York: AIP)
    • (1984) AIP Conf. Proc. , vol.120 , pp. 117-124
    • Abkowitz, M.1    Foley, G.M.T.2    Markovics, J.M.3    Pulumbo, A.C.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.