Switch-mode amplifier ICs with over 90% efficiency for Class-S PAs using GaAs-HBTs and GaN-HEMTs

IEEE MTT-S International Microwave Symposium Digest

Volumn , Issue , 2008, Pages 751-754

  Meliani, C ^a   Flucke, J ^a   Wentzel, A ^a   Wurfl J ^a   Heinrich, W ^a   Trankle G ^a  

^a LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK   (Germany)

Author keywords

Class D; Class S; GaAs; HBT; PAE; Power amplifier

Indexed keywords

GALLIUM NITRIDE; MICROWAVES; POWER AMPLIFIERS; SEMICONDUCTING GALLIUM;

CLASS-D; CLASS-S; GAAS; HBT; PAE;

GALLIUM ALLOYS;

EID: 57349195559     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MWSYM.2008.4632941     Document Type: Conference Paper

References (9)

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