ICP cryogenic dry etching for shallow and deep etching of silicon

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7362, Issue , 2009, Pages

  Sokmen U ^a   Balke, M ^a   Stranz, A ^a   Fundling S ^a   Peiner, E ^a   Wehmann, H H ^a   Waag, A ^a  

^a TECHNICAL UNIVERSITY OF BRAUNSCHWEIG   (Germany)

Author keywords

Cantilever; Cryogenic; Deep etching; Dry etching; Mass sensing; Resonance frequency; Tactile; Thermoelectric

Indexed keywords

CANTILEVER; DEEP ETCHING; MASS SENSING; RESONANCE FREQUENCY; TACTILE; THERMOELECTRIC;

ACTUATORS; ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; CRYOGENICS; GALLIUM NITRIDE; INDUCTIVELY COUPLED PLASMA; JOINING; MEMS; MICROELECTROMECHANICAL DEVICES; NANOCANTILEVERS; NANOPORES; NANOSTRUCTURED MATERIALS; NATURAL FREQUENCIES; PHOTORESISTS; PLASMA ETCHING; RESONATORS; SEMICONDUCTING GALLIUM; SEMICONDUCTING SILICON COMPOUNDS; SILICON WAFERS; SMART SENSORS; SOLAR EQUIPMENT; THERMOELECTRIC EQUIPMENT; THERMOELECTRICITY;

DRY ETCHING;

EID: 69949132455     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.820917     Document Type: Conference Paper

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