Observation of negative differential conductance in a reverse-biased Ni/ Ge schottky diode

IEEE Electron Device Letters

Volumn 30, Issue 9, 2009, Pages 966-968

  Husain, Muhammad Khaled ^a   Li, Xiaolo V ^a   de Groot, Cornelis H ^a  

^a UNIVERSITY OF SOUTHAMPTON   (United Kingdom)

Author keywords

Electrodeposition; Germanium; Gunn diode; Schottky barrier (SB); Transferred electron effect

Indexed keywords

DEPLETION REGION; EXPERIMENTAL OBSERVATION; HIGH ELECTRIC FIELDS; NEGATIVE DIFFERENTIAL CONDUCTANCE; NUMERICAL SIMULATION; REVERSE BIAS; SCHOTTKY BARRIER (SB); SCHOTTKY CONTACTS; SCHOTTKY DIODES; THEORETICAL MODELS; TRANSFERRED-ELECTRON DEVICE; TRANSFERRED-ELECTRON EFFECT; TRANSFERRED-ELECTRON EFFECTS;

COMPUTER SIMULATION; ELECTRIC FIELDS; ELECTRODEPOSITION; ELECTRON MOBILITY; ELECTRON TRANSPORT PROPERTIES; GERMANIUM; GUNN DIODES; GUNN EFFECT; HOT ELECTRONS; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR QUANTUM DOTS;

DIODES;

EID: 69949115079     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2009.2025673     Document Type: Article

References (13)

1. B. K. Ridley, "Anatomy of the transferred-electron effect in III-V semiconductors," J. Appl. Phys., vol. 48, no. 2, pp. 754-764, Feb. 1977.
2. H. Eisele, "InP Gunn devices for 400-425 GHz," Electron. Lett., vol. 42, no. 6, pp. 358-359, Mar. 2006.
3. D. M. Chang and J. G. Ruch, "Measurement of the velocity field characteristic of electrons in germanium," Appl. Phys. Lett., vol. 12, no. 3, pp. 111-112, Feb. 1968.
4. A. Forster, M. Lepsa, D. Freundt, J. Stock, and S. Montanari, "Hot electron injector Gunn diode for advanced driver assistance systems," Appl. Phys. A, Mater. Sci. Process., vol. 87, no. 3, pp. 545-558, Jun. 2007.
5. W. E. Spicer, I. Lindau, P. Skeath, C. Y. Su, and P. Chye, "Unified mechanism for Schottky-barrier formation and III-V oxide interface states," Phys. Rev. Lett., vol. 44, no. 6, pp. 420-423, Feb. 1980.
6. M. K. Husain, X. V. Li, and C. H. de Groot, "High-quality Schottky contacts for limiting leakage currents in Ge-based Schottky barrier MOSFETs," IEEE Trans. Electron Devices, vol. 56, no. 3, pp. 499-504, Mar. 2009.
7. M. Kiziroglou, X. Li, A. Zhukov, P. de Groot, and C. de Groot, "Thermionic field emission at electrodeposited Ni-Si Schottky barriers," Solid State Electron., vol. 52, no. 7, pp. 1032-1038, Jul. 2008.
8. W. Fawcett and E. G. S. Paige, "Negative differential mobility of electrons in germanium: A Monte Carlo calculation of the distribution function, drift velocity and carrier population in the (111) and (100) minima," J. Phys. C, Solid State Phys., vol. 4, no. 13, pp. 1801-1821, Sep. 1971.
9. S. M. Sze, Physics of Semiconductor Devices. New York: Wiley-Interscience, 1981.
10. D. Kazazis, A. Zaslavsky, E. Tutuc, N. A. Bojarczuk, and S. Guha, "Negative differential resistance in ultrathin Ge-on-insulator FETs," Semicond. Sci. Technol., vol. 22, no. 1, pp. S1-S4, Jan. 2007.
11. K. Uchida, K. Matsuzawa, J. Koga, S.-I. Takagi, and A. Toriumi, "Enhancement of hot-electron generation rate in Schottky source metal-oxide-semiconductor field-effect transistors," Appl. Phys. Lett., vol. 76, no. 26, pp. 3992-3994, Jun. 2000.
12. E. H. Rhoderick and R. H. Williams, Metal-Semiconductor Contacts. Oxford, U.K.: Oxford Science, 1988.
13. M. Ahmed, "Abrupt negative differential resistance in ungated GaAs FETs," IEEE Trans. Electron Devices, vol. 44, no. 11, pp. 2031-2033, Nov. 1997.