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Journal of Applied Physics

Volumn 106, Issue 4, 2009, Pages

Defects in virgin hydrothermally grown n -type ZnO studied by temperature dependent Hall effect measurements

(6) Schifano, R a Monakhov, E V a Vines, L a Svensson, B G a Mtangi, W b Auret, F D b

a UNIVERSITY OF OSLO (Norway)

b UNIVERSITY OF PRETORIA (South Africa)

Author keywords

[No Author keywords available]

Indexed keywords

ACCEPTOR LEVELS; ADMITTANCE SPECTROSCOPIES; CONDUCTING ELECTRONS; CONDUCTION BAND EDGE; DEEP DONOR; DONOR LEVELS; ELECTRICAL CONDUCTION; ENERGY BANDGAPS; HALL EFFECT MEASUREMENT; HIGH CONCENTRATION; HYDROTHERMALLY; INTRINSIC DEFECTS; LI CONTENT; MAXIMUM VALUES; OPTICAL PHONON SCATTERING; RELAXATION TIME APPROXIMATION; ROOM TEMPERATURE; TEMPERATURE DEPENDENT; TEMPERATURE RANGE; ZNO;

ELECTRON ENERGY LOSS SPECTROSCOPY; ELECTRON MOBILITY; HALL EFFECT; IMPURITIES; MAGNETIC FIELD EFFECTS; SCATTERING; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING ZINC COMPOUNDS; ZINC OXIDE;

THERMAL EFFECTS;

EID: 69749086463 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3168488 Document Type: Article

Times cited : (19)

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