THM growth and characterization of 100 mm diameter CdTe single crystals

IEEE Transactions on Nuclear Science

Volumn 56, Issue 4, 2009, Pages 1717-1723

  Shiraki, Hiroyuki ^a   Funaki, Minoru ^a   Ando, Yukio ^a   Tachibana, Akira ^a   Kominami, Shinya ^b   Ohno, Ryoichi ^a  

^a Acrorad Co Ltd   (Japan)

^b HITACHI LTD   (Japan)

Author keywords

CdTe characterization; CdTe growth; Charge transport properties; Gamma ray detectors; Te inclusions

Indexed keywords

CDTE CHARACTERIZATION; CDTE GROWTH; CHARGE TRANSPORT PROPERTIES; GAMMA-RAY DETECTORS; TE INCLUSIONS;

CADMIUM ALLOYS; CADMIUM COMPOUNDS; GAMMA RAYS; MEDICAL IMAGING; RADIATION DETECTORS; SEMICONDUCTOR DETECTORS; SEMICONDUCTOR GROWTH; SILICON WAFERS; TRANSPORT PROPERTIES;

SINGLE CRYSTALS;

EID: 69549090685     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2009.2016843     Document Type: Conference Paper

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