Effects of X-ray radiation on hydrogenated amorphous silicon thin-film transistors and characteristics of tungsten shield layer

Current Applied Physics

Volumn 10, Issue 1, 2010, Pages 184-186

  Pang, Hee suk ^a   Jeong, Yun sik ^a   Choi, Hong Seok ^a   Han, Chang Wook ^a   Tak, Yoon Heung ^a   Ahn, Byung Chul ^a  

^a LG Display Co Ltd   (South Korea)

Author keywords

AMOLED; TFT; X ray

Indexed keywords

AMOLED; CATHODE LAYERS; E BEAM EVAPORATION; FIELD-EFFECT MOBILITIES; HIGH THROUGHPUT; HYDROGENATED AMORPHOUS SILICON; HYDROGENATED AMORPHOUS SILICON (A-SI:H); ORGANIC LAYERS; SHIELD LAYERS; SUBTHRESHOLD; TFT; TUNGSTEN LAYERS; X RAY RADIATION; X-RAY;

AMORPHOUS FILMS; ELECTRIC POTENTIAL; HYDROGENATION; RADIATION EFFECTS; SEMICONDUCTING ORGANIC COMPOUNDS; THIN FILM DEVICES; THIN FILM TRANSISTORS; TUNGSTEN; X RAY PRODUCTION;

AMORPHOUS SILICON;

EID: 69349105323     PISSN: 15671739     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cap.2009.05.015     Document Type: Article

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