Electrical modeling of the effect of beam profile for pulsed laser fault injection

Microelectronics Reliability

Volumn 49, Issue 9-11, 2009, Pages 1143-1147

  Godlewski, C ^a   Pouget, V ^b   Lewis, D ^b   Lisart, M ^a  

^a STMICROELECTRONICS   (France)

^b UNIVERSITÉ DE BORDEAUX   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BEAM PROFILES; CIRCUIT DESIGNS; COMPLEX INTERACTION; ELECTRICAL MODELING; FAULT INJECTION; GAUSSIAN LASER BEAM; LASER PERTURBATION; LASER SPOTS; PULSE DURATIONS; PULSED LASER; SHAPE AND SIZE; SIMULATION-BASED ANALYSIS; TRANSIENT ERRORS;

DIGITAL DEVICES; GAUSSIAN BEAMS; LASERS; SOFTWARE TESTING;

PULSED LASER APPLICATIONS;

EID: 69249232008     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2009.07.037     Document Type: Article

References (8)

1. Pouget V, Douin A, Foucard G, Peronnard P, Lewis D, Fouillat P. Dynamic testing of an SRAM based FPGA by time-resolved laser fault injection. In: Proceedings of IEEE international on-line testing symposium; 2008. p. 295-301.
2. Wirth J., and Rogers S. Transient response of transistors and diodes to ionizing radiation. IEEE Trans Nucl Sci 11 (1964) 24
3. Enlow E., and Alexander D. Photocurrent modeling of modern microcircuit PN junctions. IEEE Trans Nucl Sci 35 (1988) 1467
4. Pouget V., Lapuyade H., Lewis D., Deval Y., Fouillat P., and Sarger L. SPICE modeling of the transient response of irradiated MOSFETs. IEEE Trans Nucl Sci 47 3 (2000) 508-513
5. Douin A, Pouget V, Lewis D, Fouillat P, Perdu P. Electrical modeling for laser testing with different pulse durations. In: Proceedings of IEEE international on-line testing symposium; 2005. p. 9-13.
6. Buard N, Miller F, Ruby C, Gaillard R. Latchup effect in CMOS IC: a solution for crypto-processors protection against fault injection attacks? In: Proceedings of IEEE international on-line testing symposium; 2007. p. 63-70.
7. Rowlette A, Eiles T. Critical timing analysis in microprocessors using near-IR laser assisted device alteration (LADA). In: International test conference; 2003. p. 264-73.
8. Cavrois V., Pouget V., McMorrow D., Schwank J., Fel N., Essely F., et al. Investigation of the propagation induced pulse broadening (PIPB) effect on single event transients in SOI and bulk inverter chains. IEEE Trans Nucl Sci 55 (2008) 2842