Trivalent dopants on ZnO semiconductor obtained by mechanical milling

Journal of Alloys and Compounds

Volumn 483, Issue 1-2, 2009, Pages 442-444

  Damonte, L C ^a,b   Donderis, V ^b   Hernandez Fenollosa M A ^b  

^a Facultad de Ciencias Naturales e Instituto M Lillo   (Argentina)

^b UNIVERSITAT POLITÈCNICA DE VALÈNCIA   (Spain)

Author keywords

Doped semiconductors; Mechanical milling; Positron annihilation; ZnO

Indexed keywords

ALUMINUM COMPOUNDS; ELECTRONS; II-VI SEMICONDUCTORS; MAGNETIC SEMICONDUCTORS; MECHANICAL ALLOYING; MILLING (MACHINING); OXIDE SEMICONDUCTORS; POSITRON ANNIHILATION; POSITRON ANNIHILATION SPECTROSCOPY; POSITRONS; SEMICONDUCTOR DOPING; SINGLE CRYSTALS; WIDE BAND GAP SEMICONDUCTORS; X RAY DIFFRACTION; ZINC OXIDE; ZINC SULFIDE;

CATION SUBSTITUTIONS; DOPED SEMICONDUCTORS; ELECTRONIC DEVICE; MECHANICAL MILLING; OPTICAL ANALYSIS; OPTICAL REFLECTION MEASUREMENTS; WURTZITE STRUCTURE; ZNO SEMICONDUCTORS;

SEMICONDUCTING ZINC COMPOUNDS;

EID: 69249228679     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2008.07.216     Document Type: Article

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