Effect of Fe doping on the room temperature ferromagnetism in chemically synthesized (In1-xFex)2O3 (0 ≤ x ≤ 0.07) magnetic semiconductors

Current Applied Physics

Volumn 10, Issue 1, 2010, Pages 333-336

  Chandradass, J ^a   Balasubramanian, M ^b   Kumar, Shalendra ^c   Bae, Dong Sik ^c   Kim, Ki Hyeon ^a  

^a Yeungnam University   (South Korea)

^b INDIAN INSTITUTE OF TECHNOLOGY MADRAS   (India)

^c Changwon National University   (South Korea)

Author keywords

Ferromagnetism; Indium oxide; Magnetic properties; Semiconductors

Indexed keywords

FE DOPING; FE-DOPED; FE-IONS; INDIUM OXIDE; LATTICE PARAMETERS; POLYCRYSTALLINE; REMANENCE MAGNETIZATION; ROOM TEMPERATURE FERROMAGNETISM; SEM MICROGRAPHS; SEM-EDS; SEMICONDUCTORS; SINGLE PHASE; X-RAY DIFFRACTION DATA;

INDIUM; IRON COMPOUNDS; LATTICE CONSTANTS; MAGNETIC PROPERTIES; MAGNETIC SEMICONDUCTORS; POWDERS; REMANENCE; SEMICONDUCTOR DOPING; X RAY DIFFRACTION;

FERROMAGNETISM;

EID: 69249220135     PISSN: 15671739     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cap.2009.06.018     Document Type: Article

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