Displacement current sensor for contact and intermittent contact scanning capacitance microscopy

Microelectronics Reliability

Volumn 49, Issue 9-11, 2009, Pages 1192-1195

  Biberger, Roland ^a   Benstetter, Guenther ^a   Goebel, Holger ^b  

^a DEGGENDORF INSTITUTE OF TECHNOLOGY   (Germany)

^b HELMUT SCHMIDT UNIVERSITY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AC VOLTAGE; AFM TIP; CAPACITANCE SENSORS; DISPLACEMENT CURRENTS; DOPANT CONCENTRATIONS; INTERMITTENT-CONTACTS; LOCK-IN; PERIODIC VARIATION; SCANNING CAPACITANCE MICROSCOPY;

AMPLIFICATION; ELECTRIC POTENTIAL; MICROWAVE ANTENNAS; SCANNING; SEMICONDUCTOR DOPING; SENSORS;

CAPACITANCE;

EID: 69249213959     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2009.07.007     Document Type: Article

References (7)

1. Breitschopf P., Benstetter G., Knoll B., and Frammelsberger W. Intermittent contact scanning capacitance microscopy - An improved method for 2D doping profiling. Microelectron Reliab 45 (2005) 1568-1571
2. Digital Instruments, Scanning capacitance microscopy (SCM). Support note no. 224, Rev D; 1999.
3. Kopanski J., Marchiando J., and Lowney J. Canning capacitance microscopy applied to two-dimensional dopant profiling of semiconductors. Mater Sci Eng 44 (1997) 46-51
4. Williams C.C. Two-dimensional dopant profiling by scanning capacitance microscopy. Annu Rev Mater Sci 29 (1999) 471-504
5. Bhusan B. Handbook of nanotechnology (2004), Springer
6. Wong C. Study of parameter sensitivity in scanning capacitance microscopy measurement of semiconductor dopant profile. Bachelor Thesis; 2002.
7. Meade M.L. Lock-in amplifiers (1983), Peter Peregrinus Ltd.