Modification of AZO thin-film properties by annealing and ion etching

Vacuum

Volumn 84, Issue 1, 2009, Pages 215-217

  Flickyngerova, S ^a   Netrvalova, M ^b   Prusakova, L ^b   Novotny, I ^a   Sutta, P ^b   Tvarozek, V ^a  

^a SLOVAK UNIVERSITY OF TECHNOLOGY   (Slovakia)

^b UNIVERSITY OF WEST BOHEMIA   (Czech Republic)

Author keywords

Annealing; Ion etching; RF diode sputtering; ZnO:Al

Indexed keywords

ANNEALED SAMPLES; ANNEALING TEMPERATURES; ELECTRICAL AND OPTICAL PROPERTIES; FIGURE OF MERIT; FORMING GAS; ION ETCHING; MAXIMUM VALUES; POST DEPOSITION ANNEALING; RF DIODE SPUTTERING; SPUTTER ETCHING; THIN-FILM PROPERTIES; ZNO; ZNO:AL;

ALUMINUM; ELECTRIC PROPERTIES; ETCHING; IONS; OPTICAL PROPERTIES; SEMICONDUCTING ZINC COMPOUNDS; SURFACE TOPOGRAPHY; THIN FILMS; ZINC OXIDE;

ANNEALING;

EID: 69249212267     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.vacuum.2009.04.006     Document Type: Article

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