XOR gate response in a mesoscopic ring with embedded quantum dots

Solid State Communications

Volumn 149, Issue 39-40, 2009, Pages 1623-1627

  Maiti, Santanu K ^a,b  

^a SAHA INSTITUTE OF NUCLEAR PHYSICS   (India)

^b NARASINHA DUTT COLLEGE   (India)

Author keywords

A. Mesoscopic ring; D. Conductance; D. I V characteristic; D. XOR gate

Indexed keywords

A. MESOSCOPIC RING; COUPLING STRENGTHS; D. CONDUCTANCE; D. I-V CHARACTERISTIC; D. XOR GATE; ELECTRONIC LOGIC; EMBEDDED QUANTUM DOTS; GATE VOLTAGES; GREEN'S FUNCTION METHODS; HIGH OUTPUT; MESOSCOPIC RING; METALLIC ELECTRODES; ONE-DIMENSIONAL; OUTPUT CURRENT; QUANTUM DOT; SEMI-INFINITE; TIGHT BINDING MODEL; XOR GATES;

ELECTRIC POTENTIAL; ELECTRODES; GREEN'S FUNCTION; MAGNETIC FLUX; MAGNETIC STRUCTURE; SEMICONDUCTOR QUANTUM DOTS; SUPERCONDUCTING MATERIALS;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 69149094266     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2009.06.027     Document Type: Article

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