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Volumn 47, Issue 4 PART 2, 2008, Pages 3095-3098

Improved photoconduction effects of nanometer-sized silicon dot multilayers

Author keywords

Dangling bond; Hydrogen termination; Multilayer; Nanometer sized Si dot; Photoconduction effect; Quantum efficiency; Self assemble

Indexed keywords

CHEMICAL SENSORS; DANGLING BONDS; ELECTRIC CONDUCTIVITY; HYDROGEN; HYDROGEN BONDS; MULTILAYERS; NANOSTRUCTURED MATERIALS; PHOTOCONDUCTIVITY; SEMICONDUCTOR QUANTUM DOTS; SENSOR NETWORKS; SILICON;

EID: 54249109921     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.47.3095     Document Type: Article
Times cited : (4)

References (8)
  • 7
    • 0000227182 scopus 로고    scopus 로고
    • Properties of Porous Silicon
    • IEE, London
    • L. Chanham: Properties of Porous Silicon (IEE, London, 1997) EMIS Data Review Series, No. 18, p. 234.
    • (1997) EMIS Data Review Series , vol.18 , pp. 234
    • Chanham, L.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.