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Volumn 47, Issue 4 PART 2, 2008, Pages 3095-3098
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Improved photoconduction effects of nanometer-sized silicon dot multilayers
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Author keywords
Dangling bond; Hydrogen termination; Multilayer; Nanometer sized Si dot; Photoconduction effect; Quantum efficiency; Self assemble
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Indexed keywords
CHEMICAL SENSORS;
DANGLING BONDS;
ELECTRIC CONDUCTIVITY;
HYDROGEN;
HYDROGEN BONDS;
MULTILAYERS;
NANOSTRUCTURED MATERIALS;
PHOTOCONDUCTIVITY;
SEMICONDUCTOR QUANTUM DOTS;
SENSOR NETWORKS;
SILICON;
FUNCTIONAL IMAGES;
HIGHLY SENSITIVES;
HYDROGEN TERMINATION;
HYDROGEN TERMINATIONS;
IMAGE SENSING;
LOW BIAS VOLTAGES;
LOW-VOLTAGE;
MULTILAYER SAMPLES;
NANOMETER-SIZED SI DOT;
PHOTOCONDUCTION;
PHOTOCONDUCTION EFFECT;
PHOTOCONDUCTIVE PROPERTIES;
PROCESSING PARAMETERS;
SELF ASSEMBLE;
SI NANODOTS;
SILICON DOTS;
SPATIAL DENSITIES;
THERMAL OXIDATIONS;
UV LIGHT;
QUANTUM EFFICIENCY;
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EID: 54249109921
PISSN: 00214922
EISSN: 13474065
Source Type: Journal
DOI: 10.1143/JJAP.47.3095 Document Type: Article |
Times cited : (4)
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References (8)
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