Optimum carrier concentration of the substrate for avalanche photocurrent multiplication in an amorphous SiC:H/amorphous Si:H/crystalline Si heterojunction photodiode

Materials Science and Engineering: B

Volumn 90, Issue 1-2, 2002, Pages 120-124

  Ohtake, H ^a   Nishiguchi, T ^a   Hirano, Y ^a   Sato, F ^a   Abe, M ^a   Saito, N ^a   Sawada, K ^b   Ando, T ^c  

^a NHK SCIENCE AND TECHNICAL RESEARCH LABORATORIES   (Japan)

^b TOYOHASHI UNIVERSITY OF TECHNOLOGY   (Japan)

^c SHIZUOKA UNIVERSITY   (Japan)

Author keywords

Amorphous silicon; Carrier concentration; Photocurrent multiplication; Photodiode

Indexed keywords

AMORPHOUS SILICON; CARRIER CONCENTRATION; CRYSTALLINE MATERIALS; ELECTRIC FIELD EFFECTS; ELECTRON CYCLOTRON RESONANCE; HETEROJUNCTIONS; PHOTOCURRENTS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SUBSTRATES;

PHOTOCURRENT MULTIPLICATION;

PHOTODIODES;

EID: 0037034686     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(01)00921-7     Document Type: Article

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