Preparation of CuInSe2 thin films by four-step process

International Journal of Minerals, Metallurgy and Materials

Volumn 16, Issue 4, 2009, Pages 439-443

  Wang, Yan lai ^a   Nie, Hong bo ^a   Ni, Pei ran ^b   Wang, Yi min ^a   Guo, Shi ju ^a  

^a UNIVERSITY OF SCIENCE AND TECHNOLOGY BEIJING   (China)

^b Wuxi Asic Micro Electronics Co Ltd   (China)

Author keywords

compaction; CuInSe2; electrodeposition; selenization

Indexed keywords

ANNEALING TEMPERATURES; CONSTANT CURRENT; CRYSTALLINITIES; CUINSE2; SELENIZATION; SEM; SMOOTH SURFACE; X-RAY DIFFRACTOMETRY;

COMPACTION; COPPER COMPOUNDS; ELECTRODEPOSITION; ELECTRON ENERGY LOSS SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; THIN FILMS; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

FILM PREPARATION;

EID: 68749090957     PISSN: 16744799     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1674-4799(09)60077-7     Document Type: Article

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