Controlled synthesis and enhanced field emission characteristics of conical carbon nanotubular arrays

Diamond and Related Materials

Volumn 18, Issue 10, 2009, Pages 1262-1266

  Dumpala, Santoshrupa ^a   Safir, Abdelilah ^b   Mudd, David ^b   Cohn, Robert W ^b   Sunkara, Mahendra K ^a   Sumanasekera, Gamini U ^b  

^a University of Louisville   (United States)

^b UNIVERSITY OF LOUISVILLE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONICAL CARBON; CONICAL CARBON NANOTUBES; CONTROLLED SYNTHESIS; EMISSION CHARACTERISTICS; ENHANCED FIELD EMISSION; FIELD SCREENING EFFECTS; FIELD-EMISSION CHARACTERISTICS; HIGH CURRENT DENSITIES; HIGH FIELD; MICROWAVE PLASMA CHEMICAL VAPOR DEPOSITIONS; MORPHOLOGICAL CHARACTERISTIC; NANOTUBULAR; PROCESS PARAMETERS; STRUCTURAL CHARACTERISTICS; TIP RADIUS; TURN-ON ELECTRIC FIELD; UNIFORM DIAMETER; WALL STRUCTURE;

ASPECT RATIO; ELECTRIC FIELDS; FIELD EMISSION; MICROWAVES; PLASMA DEPOSITION; PRESSURE DROP; SYNTHESIS (CHEMICAL); WALLS (STRUCTURAL PARTITIONS);

CARBON NANOTUBES;

EID: 68749084596     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.diamond.2009.04.004     Document Type: Article

References (18)

1. Chen Z., Wei Y., Luo C.X., Jiang K.L., Zhang L., Li Q.Q., Fan S.S., and Gao J.C. Appl. Phys. Lett. 90 (2007) 1331081
2. Fujii S., Honda S., Machida H., Kawai H., Ishida K., Katayama M., Furuta H., Hirao T., and Oura K. Appl. Phys. Lett. 90 (2007) 153108
3. Milne W.I., Teo K.B.K., Amaratunga G.A.J., Legagneux P., Gangloff L., Schnell J.P., Semet V., Binh V.T., and Groening O.J. Mater. Chem. 14 (2004) 933
4. Bonard J.M., Kind H., Stockli T., and Nilsson L.A. Solid-State Electron. 45 (2001) 893
5. Bonard J.M., Salvetat J.P., Stöckli T., de Heer W.A., Forró L., and Châtelain A. Appl. Phys. Lett. 73 (1998) 918
6. Wang Q.H., Corrigan T.D., Dai J.Y., Chang R.P.H., and Krauss A.R. Appl. Phys. Lett. 70 (1997) 3308
7. Sveningsson M., Morjan R.E., Nerushev O.A., Sato Y., Backstrom J., Campbell E.E.B., and Rohmund F. Appl. Phys., A Mater. Sci. Process. 73 (2001) 409
8. Mani R.C., Li X., Sunkara M.K., and Rajan K. Nano Lett. 3 (2003) 671
9. Zhang G.Y., Jiang X., and Wang E.G. Science 300 (2003) 472
10. Lowe R.D., Mani R.C., Baldwin R.P., and Sunkara M.K. Electrochem. Solid-State Lett. 9 (2006) H43
11. Nilsson L., Groening O., Emmenegger C., Kuettel O., Schaller E., Schlapbach L., Kind H., Bonard J.M., and Kern K. Appl. Phys. Lett. 76 (2000) 2071
12. Zhang W., Xi Z.H., Zhang G.M., Wang S., Wang M.S., Wang J.Y., and Xue Z.Q. Appl. Phys., A Mater. Sci. Process. 86 (2007) 171
13. Li J.J., Gu C.Z., Wang Q., Xu P., Wang Z.L., Xu Z., and Bai X.D. Appl. Phys. Lett. 87 (2005) 143107
14. Wang M.S., Chen Q., and Peng L.M. Small 4 (2008) 1907
15. Dean K.A., Burgin T.P., and Chalamala B.R. Appl. Phys. Lett. 79 (2001) 1873
16. Chernomordik B., Dumpala S., Chen Z.Q., and Sunkara M.K. Chem. Vap. Depos. 14 (2008) 1
17. Xu N.S., Chen Y., Deng S.Z., Chen J., Ma X.C., and Wang E.G. J. Phys., D. Appl. Phys. 34 (2001) 1597
18. Maiti A., Andzelm J., Tanpipat N., and von Allmen P. Phys. Rev. Lett. 87 (2001) 155502