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Japanese Journal of Applied Physics

Volumn 48, Issue 6, 2009, Pages

Dependence of electron g-factor on barrier aluminum content in GaAs/AlGaAs quantum wells

(6) Shichi, Wataru a Tetsu, Ito a Ichida, Masao a Gotoh, Hideki b Kamada, Hidehiko b Ando, Hiroaki a

a KONAN UNIVERSITY (Japan)

b NTT Basic Research Laboratories (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM CONTENTS; ELECTRON G-FACTOR; ELECTRON SPIN PRECESSION; G FACTORS; GAAS; GAAS/ALGAAS QUANTUM WELL; LONGITUDINAL COMPONENTS; PERTURBATION THEORY; QUANTUM WELL STRUCTURES; TENSOR COMPONENTS; THEORETICAL RESULT; TIME-RESOLVED PHOTOLUMINESCENCE; TRANSVERSE COMPONENTS; WELL THICKNESS;

ALUMINA; ALUMINUM; ELECTRONS; GALLIUM; MAGNETIC FIELDS; PERTURBATION TECHNIQUES; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM DOTS; SPIN DYNAMICS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 68649125627 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.48.063002 Document Type: Article

Times cited : (6)

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