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Volumn 45, Issue 8, 2009, Pages 3207-3209

Bit storage by 360° domain walls in ferromagnetic nanorings

Author keywords

Current induced switching; Ferromagnetic rings; Magnetoresistive random access memory (MRAM); Micromagnetic modeling; Topological domain walls

Indexed keywords

CURRENT-INDUCED SWITCHING; FERROMAGNETIC RINGS; MAGNETORESISTIVE RANDOM ACCESS MEMORY (MRAM); MICROMAGNETIC MODELING; TOPOLOGICAL DOMAIN WALLS;

EID: 68549109616     PISSN: 00189464     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMAG.2009.2020329     Document Type: Article
Times cited : (35)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.