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Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 27, Issue 4, 2009, Pages 2012-2014

Surface, bulk, and interface electronic states of epitaxial BiFeO 3 films

(9) Zhang, Jun a Rutkowski, M a Martin, L W b,c,f Conry, T b,c,f Ramesh, R b,c,f Ihlefeld, J F d Melville, A d Schlom, D G d Brillson, L J e

a OHIO STATE UNIVERSITY (United States)

b LAWRENCE BERKELEY NATIONAL LABORATORY (United States)

c Materials Sciences Division (United States)

d Cornell University (United States)

e The Ohio State University (United States)

f UNIVERSITY OF CALIFORNIA (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAPS; CATHODOLUMINESCENCE SPECTROSCOPY; DEFECT EMISSION; DEFECT STATE; DEPTH-RESOLVED; FILM PROPERTIES; GROWTH CONDITIONS; INTERFACE ELECTRONICS; LOCALIZED ELECTRONIC STATE; NEAR BAND EDGE EMISSIONS; SPATIAL DISTRIBUTION;

ELECTRONIC STATES; ELECTRONIC STRUCTURE; STOICHIOMETRY;

SEMICONDUCTING BISMUTH COMPOUNDS;

EID: 68349130665 PISSN: 10711023 EISSN: None Source Type: Journal
DOI: 10.1116/1.3130152 Document Type: Article

Times cited : (17)

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