Structural relaxation of SiO2 at elevated temperatures monitored by in situ Raman scattering

Journal of Non-Crystalline Solids

Volumn 355, Issue 34-36, 2009, Pages 1747-1754

  Goller, D D ^a   Phillips, R T ^a   Sayce, I G ^b  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b St Gobain Quartz plc Neptune Road   (United Kingdom)

Author keywords

Defects; Raman scattering; Raman spectroscopy; Silica; Structural relaxation

Indexed keywords

ELEVATED TEMPERATURE; EXPERIMENTAL APPROACHES; EXPONENTIAL DECAYS; EXPONENTIAL RELAXATION; FIRST-ORDER; HIGH-PURITY; IN-SITU; OH CONTENTS; RAMAN SCATTERING SPECTRA; SECONDARY RELAXATIONS; SILICA GLASS; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE; THERMAL BACKGROUND;

ACTIVATION ENERGY; DEFECTS; RAMAN SCATTERING; SCATTERING; SILICA; STRUCTURAL RELAXATION;

RAMAN SPECTROSCOPY;

EID: 68349104404     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jnoncrysol.2009.06.018     Document Type: Article

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