Effect of porous silicon on the performances of silicon solar cells during the porous silicon-based gettering procedure

Solar Energy Materials and Solar Cells

Volumn 93, Issue 10, 2009, Pages 1823-1826

  Nouri, H ^a   Bouaicha M ^b   Bessais B ^a  

^a Centre de Recherches et des Technologies de l'Energie   (Tunisia)

^b RESEARCH AND TECHNOLOGY CENTER OF ENERGY   (Tunisia)

Author keywords

Defect density; Gettering; Grain boundaries; Grooving; Mc Si; Porous silicon

Indexed keywords

ANNEALING TEMPERATURES; BEFORE AND AFTER; CONTROLLED ATMOSPHERE; DARK CURRENT-VOLTAGE; GETTERING; GRAIN-BOUNDARY; GROOVING; INTERNAL QUANTUM EFFICIENCY; MC-SI; MULTICRYSTALLINE SILICON (MC-SI); SI SOLAR CELLS; SI WAFER;

ANNEALING; ATMOSPHERIC TEMPERATURE; CELL MEMBRANES; CURRENT VOLTAGE CHARACTERISTICS; DEFECT DENSITY; DEFECTS; ELECTRIC POTENTIAL; GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; PHOTOVOLTAIC CELLS; POLYSILICON; SEMICONDUCTING SILICON COMPOUNDS; SILICON SOLAR CELLS; SILICON WAFERS; SOLAR CELLS;

POROUS SILICON;

EID: 68349101319     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2009.06.015     Document Type: Article

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