Grooving of grain boundaries in multicrystalline silicon: Effect on solar cell performance

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 253, Issue 1-2, 2006, Pages 260-263

  Dimassi, W ^a   Bouaicha M ^a   Nouri, H ^a   Boujmil, M F ^a   Ben Nasrallah, S ^a   Bessais B ^a  

^a RESEARCH AND TECHNOLOGY CENTER OF ENERGY   (Tunisia)

Author keywords

Chemical etching; Gettering; Grain boundaries; Multicrystalline silicon; Passivation

Indexed keywords

DIFFUSION; ETCHING; GRAIN BOUNDARIES; POLYCRYSTALLINE MATERIALS; SILICON SOLAR CELLS; SILICON WAFERS;

CHEMICAL ETCHING; DEEP METALLIC CONTACTS; LIGHT-BEAM-INDUCED-CURRENT (LBIC); MULTICRYSTALLINE SILICON;

POLYSILICON;

EID: 33751334649     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2006.10.034     Document Type: Article

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