Combination of gettering and etching in multicrystalline silicon used in solar cells processing

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 253, Issue 1-2, 2006, Pages 264-268

  Dimassi, W ^a   Bouaicha M ^a   Nouri, H ^a   Ben Nasrallah, S ^a   Bessais B ^a  

^a RESEARCH AND TECHNOLOGY CENTER OF ENERGY   (Tunisia)

Author keywords

Etching; Gettering; Multicrystalline silicon; Passivation

Indexed keywords

ETCHING; GETTERS; GRAIN BOUNDARIES; HEAT TREATMENT; IMPURITIES; INFRARED FURNACES; POLYCRYSTALLINE MATERIALS; SILICON SOLAR CELLS; SILICON WAFERS;

DIFFUSION LENGTH; ELECTRONIC PARAMETERS; GRAIN BOUNDARY RECOMBINATION VELOCITY; MULTICRYSTALLINE SILICON;

POLYSILICON;

EID: 33751331978     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2006.10.032     Document Type: Article

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