Atomistic simulations of self-trapped exciton formation in silicon nanostructures: The transition from quantum dots to nanowires

Journal of Physical Chemistry C

Volumn 113, Issue 30, 2009, Pages 12935-12938

  Wang, Yong ^a,b   Zhang, Ruiqin ^c   Frauenheim, Thomas ^a   Niehaus, Thomas A ^a  

^a UNIVERSITY OF BREMEN   (Germany)

^b INSTITUTE OF PHYSICS   (China)

^c CITY UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMISTIC SIMULATIONS; ELECTRON CONFINEMENT; EXCITED STATE RELAXATION; GEOMETRICAL DISTORTION; LARGE ASPECT RATIO; LUMINESCENCE INTENSITY; LUMINESCENCE SPECTRUM; NANOSCALE STRUCTURE; QUANTUM DOT; RADIAL DIRECTION; SELF-TRAPPED EXCITON; SILICON NANOSTRUCTURES; STOKES SHIFT; TIME DEPENDENT DENSITY FUNCTIONAL THEORY;

ASPECT RATIO; DENSITY FUNCTIONAL THEORY; ELECTRIC WIRE; EXCITED STATES; HYDROGEN; LUMINESCENCE; NANOSTRUCTURES; PASSIVATION; PLASMA CONFINEMENT; SEMICONDUCTOR QUANTUM DOTS;

EXCITONS;

EID: 68349086855     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp903898u     Document Type: Article

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