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Applied Physics Letters

Volumn 95, Issue 4, 2009, Pages

Photoluminescence properties of erbium doped InGaN epilayers

(5) Sedhain, A a,b Ugolini, C b Lin, J Y a Jiang, H X a Zavada, J M c

a Texas Tech University (United States)

b KANSAS STATE UNIVERSITY (United States)

c North Carolina State University (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE QUALITY; DEEP LEVEL; EMISSION INTENSITY; ENHANCED EMISSION; ER-DOPED; ERBIUM DOPED; IMPURITY TRANSITIONS; INGAN EPILAYERS; METALORGANIC CHEMICAL VAPOR DEPOSITION; ORDER OF MAGNITUDE; PHOTOLUMINESCENCE INTENSITIES; PHOTOLUMINESCENCE PROPERTIES;

EPILAYERS; GALLIUM ALLOYS; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; ORGANIC CHEMICALS; ORGANOMETALLICS; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM; SODIUM;

ERBIUM;

EID: 68249131198 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3193532 Document Type: Article

Times cited : (7)

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