Ab initio investigation of the pressure dependences of phonon and dielectric properties for III-V semiconductors

Journal of Physics Condensed Matter

Volumn 17, Issue 28, 2005, Pages 4475-4488

  Wang, S Q ^a   Ye, H Q ^a  

^a INSTITUTE OF METAL RESEARCH   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC COMPOUNDS; CARRIER COMMUNICATION; DIELECTRIC PROPERTIES; HEAT CONDUCTION; HYDROSTATIC PRESSURE; LATTICE VIBRATIONS; NEUTRON SCATTERING; NITRIDES; PERTURBATION TECHNIQUES; PHONONS; PROBABILITY DENSITY FUNCTION; RAMAN SCATTERING; SPECIFIC HEAT; THERMAL EXPANSION;

DENSITY-FUNCTIONAL PERTURBATION THEORY (DEPT); DENSITY-FUNCTIONAL THEORY (DFT); GAUSSIAN PSEUDOPOTENTIALS; IONICITY CHARACTER;

SEMICONDUCTOR MATERIALS;

EID: 22144451497     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/17/28/007     Document Type: Article

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