Integrated a ZnSe MSM photodiode and an InGaP/GaAs hbt on a GaAs substrate for high sensitivity short wavelength photodetector

IEEE Sensors Journal

Volumn 9, Issue 8, 2009, Pages 902-907

  Chen, Ming Yao ^a   Chang, Chung Cheng ^a  

^a NATIONAL TAIWAN OCEAN UNIVERSITY   (Taiwan)

Author keywords

Heterojunction bipolar transistors; Optoelectronic devices; Photodiodes

Indexed keywords

COMMON EMITTER; CURRENT AMPLIFICATION; DEVICE STRUCTURES; GAAS SUBSTRATES; HIGH SENSITIVITY; INDIVIDUAL COMPONENTS; INGAP/GAAS HBT; INTEGRATED DEVICE; METAL-SEMICONDUCTOR-METAL PHOTODIODES; OPTICAL AND ELECTRICAL CHARACTERIZATION; PHOTORECEIVER; SELECTIVE-AREA EPITAXY; SHORT WAVELENGTHS; VOLTAGE AMPLIFICATION;

AMPLIFICATION; BICMOS TECHNOLOGY; BIPOLAR TRANSISTORS; CRYSTAL GROWTH; ELECTRIC POTENTIAL; ELECTROOPTICAL DEVICES; GALLIUM ALLOYS; OPTOELECTRONIC DEVICES; PHOTODETECTORS; PHOTODIODES; SEMICONDUCTING GALLIUM; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS; SUBSTRATES;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 67749120412     PISSN: 1530437X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSEN.2009.2022564     Document Type: Article

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