Boundary layer-assisted chemical bath deposition of well-aligned ZnO rods on Si by a one-step method

Applied Physics A: Materials Science and Processing

Volumn 96, Issue 3, 2009, Pages 775-781

  Wang, Ruey Chi ^a   Lin, Hsin Ying ^a   Chen, Shu Jen ^b   Lai, Yi Feng ^c   Huang, Michael R S ^c  

^a NATIONAL UNIVERSITY OF KAOHSIUNG   (Taiwan)

^b NATIONAL KAOHSIUNG UNIVERSITY OF APPLIED SCIENCES   (Taiwan)

^c NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ALIGNED RODS; CHEMICAL-BATH DEPOSITION; CROSS SECTIONAL IMAGE; ONE STEP; ONE-STEP METHODS; POLYCRYSTALLINE; PRECURSOR CONCENTRATION; PREFERRED ORIENTATIONS; REACTION TEMPERATURE; SCANNING ELECTRON MICROSCOPY IMAGE; SEED LAYER; SI SUBSTRATES; SI(1 0 0); SINGLE-CRYSTALLINE; WELL-ALIGNED; ZNO; ZNO ROD;

ALIGNMENT; BOUNDARY LAYERS; DIFFRACTION; HOLOGRAPHIC INTERFEROMETRY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING ZINC COMPOUNDS; SILICON; TRANSMISSION ELECTRON MICROSCOPY; ZINC OXIDE;

SUBSTRATES;

EID: 67651202625     PISSN: 09478396     EISSN: 14320630     Source Type: Journal    
DOI: 10.1007/s00339-009-5271-6     Document Type: Article

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