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Volumn 44, Issue 7, 2009, Pages 2019-2025

An 8-bit flash analog-to-digital converter in standard CMOS technology functional from 4.2 K to 300 K

Author keywords

Cryogenic ADC; Cryogenic CMOS; Cryogenic electronics; LHT; Low temperature electronics

Indexed keywords

CMOS TECHNOLOGY; CRYOGENIC ELECTRONICS; CRYOGENIC SENSORS; DIFFERENTIAL NONLINEARITY; FLASH ANALOG-TO-DIGITAL CONVERTERS; LHT; LOW-TEMPERATURE ELECTRONICS; OPERATING TEMPERATURE; ROOM TEMPERATURE; SAMPLING FREQUENCIES; SPICE MODEL; STANDARD CMOS TECHNOLOGY; SWITCHING SCHEME; TEMPERATURE RANGE; TEMPERATURE-INDUCED;

EID: 67651156123     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSSC.2009.2021918     Document Type: Article
Times cited : (22)

References (21)
  • 3
    • 67651198089 scopus 로고    scopus 로고
    • A Low Noise, 12-Bit, 25 Msps ADC. Linear Technology, LTC1745 Data sheet, 2003 [Online]. Available: http://www.linear.com/pc/down-loadDocument.do?navId= H0,Cl,C1155,C1001,C1150,P2300,D2551
    • A Low Noise, 12-Bit, 25 Msps ADC. Linear Technology, LTC1745 Data sheet, 2003 [Online]. Available: http://www.linear.com/pc/down-loadDocument.do?navId= H0,Cl,C1155,C1001,C1150,P2300,D2551
  • 4
    • 0036908385 scopus 로고    scopus 로고
    • Superconducting bandpass ΔΣ modulator with 2.23-GHz center frequency and 42.6-GHz sampling rate
    • Dec
    • J. F. Bulzacchelli, L. Hae-Seung, J. A. Misewich, and M. B. Ketchen, "Superconducting bandpass ΔΣ modulator with 2.23-GHz center frequency and 42.6-GHz sampling rate," IEEE J. Solid-State Circuits, vol. 37, no. 12, pp. 1695-1702, Dec. 2002.
    • (2002) IEEE J. Solid-State Circuits , vol.37 , Issue.12 , pp. 1695-1702
    • Bulzacchelli, J.F.1    Hae-Seung, L.2    Misewich, J.A.3    Ketchen, M.B.4
  • 5
    • 67651198640 scopus 로고    scopus 로고
    • Hybrid photonic analog to digital converter using superconducting electronics,
    • U.S. Patent 6,771,201, Aug. 3
    • M. Currie, "Hybrid photonic analog to digital converter using superconducting electronics," U.S. Patent 6,771,201, Aug. 3, 2004.
    • (2004)
    • Currie, M.1
  • 6
    • 0028447832 scopus 로고
    • A niobium nitride-based analog to digital converter using rapid single flux quantum logic operating at 9.5 K
    • M. Radparvar, "A niobium nitride-based analog to digital converter using rapid single flux quantum logic operating at 9.5 K," IEEE Trans. Magn., vol. 27, no. 2, pp. 92-96, 1994.
    • (1994) IEEE Trans. Magn , vol.27 , Issue.2 , pp. 92-96
    • Radparvar, M.1
  • 8
    • 0026218964 scopus 로고
    • Transient response of silicon devices at 4.2 K: II. Application to the case of a metal-oxide-semiconductor transistor
    • E. Simoen, B. Dierickx, C. Claeys, and G. Declerck, "Transient response of silicon devices at 4.2 K: II. Application to the case of a metal-oxide-semiconductor transistor," Semicond., Sci. Technol., vol. 6, pp. 905-911, 1991.
    • (1991) Semicond., Sci. Technol , vol.6 , pp. 905-911
    • Simoen, E.1    Dierickx, B.2    Claeys, C.3    Declerck, G.4
  • 10
    • 67651192659 scopus 로고    scopus 로고
    • C. Claeys, E. Simoen, and L. Adams, Literature Study on Radiation Effects in Cryogenic Electronics, (Dl-1997). ESA/ESTEC contact report P35284-IM-RP-0013, Mar. 30, 2000.
    • C. Claeys, E. Simoen, and L. Adams, Literature Study on Radiation Effects in Cryogenic Electronics, (Dl-1997). ESA/ESTEC contact report P35284-IM-RP-0013, Mar. 30, 2000.
  • 11
    • 67651195720 scopus 로고    scopus 로고
    • Design of read-out electronics in a standard CMOS process for operation below 30 K
    • ESTEC, Noordwijk, The Netherlands, Jun
    • O. Charlier, "Design of read-out electronics in a standard CMOS process for operation below 30 K," in Proc. 4th European Workshop on Low Temperature Electronics (WOLTE-4), ESTEC, Noordwijk, The Netherlands, Jun. 2000.
    • (2000) Proc. 4th European Workshop on Low Temperature Electronics (WOLTE-4)
    • Charlier, O.1
  • 12
    • 0027623927 scopus 로고
    • Low-frequency noise behavior of Si NMOSTs stressed at 4.2 K
    • Jul
    • E. Simoen, B. Dierickx, and C. Claeys, "Low-frequency noise behavior of Si NMOSTs stressed at 4.2 K," IEEE Trans. Electron Devices, vol. 40, no. 7, pp. 1296-1299, Jul. 1993.
    • (1993) IEEE Trans. Electron Devices , vol.40 , Issue.7 , pp. 1296-1299
    • Simoen, E.1    Dierickx, B.2    Claeys, C.3
  • 15
    • 0024910506 scopus 로고
    • A numerical simulation of the transient drain current in a MOST at cryogenic temperatures
    • Burlington, VT, Aug
    • M. E. Grupen and C. R. Viswanathan, "A numerical simulation of the transient drain current in a MOST at cryogenic temperatures," in Proc. Workshop on Low Temperature Semiconductor Electronics, Burlington, VT, Aug. 1989, pp. 63-67.
    • (1989) Proc. Workshop on Low Temperature Semiconductor Electronics , pp. 63-67
    • Grupen, M.E.1    Viswanathan, C.R.2
  • 19
    • 0036544662 scopus 로고    scopus 로고
    • Speed-power-accuracy tradeoff in high-speed CMOS ADCs
    • Apr
    • K. Uyttenhove and M. S. J. Steyaert, "Speed-power-accuracy tradeoff in high-speed CMOS ADCs," IEEE Trans. Circuits Syst. II, vol. 49, no. 4, pp. 280-287, Apr. 2002.
    • (2002) IEEE Trans. Circuits Syst. II , vol.49 , Issue.4 , pp. 280-287
    • Uyttenhove, K.1    Steyaert, M.S.J.2
  • 21
    • 0041441251 scopus 로고    scopus 로고
    • Linear kink effect induced by electron valence band tunneling in ultrathin gate oxide bulk and SOI MOSFETS
    • Jul
    • A. Mercha, J. M. Rafi, E. Simoen, E. Augendre, and C. Claeys, "Linear kink effect induced by electron valence band tunneling in ultrathin gate oxide bulk and SOI MOSFETS," IEEE Trans. Electron Devices, vol. 50, no. 7, pp. 1675-1682, Jul. 2003.
    • (2003) IEEE Trans. Electron Devices , vol.50 , Issue.7 , pp. 1675-1682
    • Mercha, A.1    Rafi, J.M.2    Simoen, E.3    Augendre, E.4    Claeys, C.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.